Output circuit for semiconductor device, semiconductor device having output circuit, and method of adjusting characteristics of output circuit

ABSTRACT

To decrease the circuit scale necessary for the calibration of the output circuit and to decrease the time required for the calibration operation. The invention includes a first output buffer and a second output buffer that are connected to a data pin, and a calibration circuit that is connected to a calibration pin. The first output buffer and the second output buffer include plural unit buffers. The unit buffers have mutually the same circuit structures. With this arrangement, the impedances of the first output buffer and the second output buffer can be set in common, based on the calibration operation using the calibration circuit. Consequently, both the circuit scale necessary for the calibration operation and the time required for the calibration operation can be decreased.

TECHNICAL FIELD

The present invention relates to an output circuit for a semiconductordevice, and a semiconductor device having this output circuit.Particularly, the invention relates to an output circuit having anoutput buffer of which impedance can be adjusted, and a semiconductordevice having this output circuit. The present invention also relates toa method of adjusting characteristics of an output circuit, and a methodof adjusting impedance of an output buffer included in the outputcircuit.

BACKGROUND OF THE INVENTION

In recent years, a very high data transfer rate is required to transferdata between semiconductor devices, for example, between a CPU and amain memory. In order to achieve this, the amplitude of input and outputsignals is made smaller each year. When the amplitude of the input andoutput signals is made smaller, the required precision of the impedanceof the output buffer becomes considerably severe. The impedance of theoutput buffer varies based on process conditions at the manufacturingtime. In addition, the impedance is also affected by a change in theambient temperature and a variation in power supply voltage during theactual usage of the semiconductor device.

Therefore, when a high precision is required for the impedance, anoutput buffer having the impedance adjusting function is employed (seeJapanese Patent Application Laid-open Nos. 2002-152032 and 2004-32070).The adjustment of the impedance of the output buffer is usually carriedout using a circuit called a calibration circuit.

On the other hand, when plural chips are connected in parallel on anexternal bus like a DRAM (Dynamic Random Access Memory), a signal isreflected in some times by a chip of which output buffer is in ahigh-impedance state (Hi-Z). When the reflection of a signal occurs, thequality of the signal on the external bus is lowered. Therefore, in asemiconductor device in which a high data transfer rate is required likea DDR2 type SDRAM (Synchronous Dynamic Random Access Memory), an ODT (OnDie Termination) function for making the output circuit function as aterminal resistor is provided (see Japanese Patent Application Laid-openNo. 2003-133943).

When the semiconductor device has the ODT function, a terminal resistoris not necessary on the mother board. Therefore, the number of parts canbe decreased, and the reflection of a signal can be preventedeffectively. Consequently, the quality of the signal on the external buscan be increased.

However, usually, during the ODT operation, impedance which is differentfrom that during the data output time is required. Therefore, when theoutput circuit has the ODT function, two calibration circuits for theimpedance adjustment are necessary, that is, a calibration circuit thatis used to adjust the impedance at the data output time, and acalibration circuit that is used to adjust the impedance at the ODToperation time. This has a problem in that the circuit scale becomeslarge.

During the calibration operation, the adjustment of the impedance at thedata output time and the adjustment of impedance at the ODT operationtime need to be carried out separately. Therefore, there is a problem inthat it takes time for the calibration. This problem is not so seriouswhen the calibration is carried out at only the power supply on time orthe reset time. However, when the calibration is carried outperiodically during the actual use time, this problem becomes serious.

SUMMARY OF THE INVENTION

The present invention has been achieved to solve the above problems, andit is an object of the invention to decrease the circuit scale necessaryfor the calibration operation.

It is another object o-f the invention to decrease the calibration time.

The above and other objects of the present invention can be accomplishedby an output circuit for a semiconductor device, comprising: a firstoutput buffer that is connected to a data pin, and is activated at leastat a data output time; a second output buffer that is connected to thedata pin, and is activated at least at an ODT operation time; and acalibration circuit that is connected to a calibration pin forcontrolling impedances of the first output buffer and the second outputbuffer in common.

It is preferable that each of the first and the second output buffersincludes one or parallel-connected two or more unit buffers, and theunit buffers have mutually substantially the same circuit structures. Itis further preferable that the calibration circuit includes a replicabuffer having substantially the same circuit structure as that of theunit buffer.

The above and other objects of the present invention can also beaccomplished by a method of adjusting characteristics of an outputcircuit having a first output buffer that is activated at least at adata output time and a second output buffer that is activated at leastat an ODT operation time, comprising: generating an impedance controlsignal based on a calibration operation using a calibration circuit; andapplying the impedance control signal in common to the first and thesecond output buffers

According to the present invention, the impedances of the first and thesecond output buffers can be set in common based on the calibrationoperation. Therefore, the calibration circuit that is used to adjust theimpedance at the data output time and the calibration circuit that isused to adjust the impedance at the ODT operation time do not need to beprovided separately. Consequently, the circuit scale of the calibrationcircuit can be decreased.

Because the impedance adjustment at the data output time and theimpedance adjustment at the ODT operation time can be completedsimultaneously in one-time calibration operation, time necessary for thecalibration operation can be decreased.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of this inventionwill become more apparent by reference to the following detaileddescription of the invention taken in conjunction with the accompanyingdrawings, wherein:

FIG. 1 is a block diagram of a configuration of an output circuit of asemiconductor device according to a preferred embodiment of the presentinvention;

FIG. 2 is a circuit diagram of the unit buffer;

FIG. 3 is a circuit diagram of the calibration circuit;

FIG. 4 is a circuit diagram of the pull-up circuit;

FIG. 5 is a circuit diagram of the pull-down circuit;

FIG. 6 is a circuit diagram of the pre-stage circuit;

FIG. 7 is a flowchart for explaining the calibration operation;

FIG. 8 is a graph showing a change of potential at the calibration pinduring the calibration operation;

FIG. 9 is a graph showing a change of potential at the contact duringthe calibration operation;

FIG. 10 is a table for explaining the operation carried out by theoutput control circuit; and

FIG. 11 is a circuit diagram showing an example of a mutual connectionof the unit buffers inside the circuit.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Preferred embodiments of the present invention will now be explained indetail with reference to the drawings.

FIG. 1 is a block diagram of a configuration of an output circuit (aninput and output circuit) 100 of a semiconductor device according to apreferred embodiment of the present invention.

As shown in FIG. 1, the output circuit 100 according to the presentembodiment includes a first output buffer 110 and a second output buffer120 that are connected to a data pin DQ, a calibration circuit 130 thatis connected to a calibration pin ZQ, and an input buffer 170 that isconnected to the data pin DQ.

The output circuit (the input and output circuit) 100 according to thisembodiment has the ODT function in addition to the ordinary data inputand output function. The ODT function is the function of preventing areflection of a signal, by making the output circuit function as aterminal resistor, when other semiconductor device is carrying out adata transfer on the external bus connected to the data pin DQ.

In the output circuit 100 according to this embodiment, both the firstoutput buffer 110 and the second output buffer 120 are activated at thedata output time, and only the second output buffer 120 is activated atthe ODT operation time. In other words, the first output buffer 110 isinactivated at the ODT operation time. While the input buffer 170 isactivated at the data input time, details of the configuration and thedata input operation of the input buffer 170 are not directly relevantto the gist of the present invention. Therefore, their explanation isomitted from this specification.

As shown in FIG. 1, the first output buffer 110 includes three unitbuffers 111 to 113 that are connected in parallel, and the second outputbuffer 120 includes three unit buffers 121 to 123 that are connected inparallel. These unit buffers 111 to 113 and 121 to 123 have mutually thesame circuit structures. For example, in this embodiment, each unitbuffer has the impedance of 240Ω (after the adjustment). Therefore, whenall the unit buffers 111 to 113 and 121 to 123 are activated, theimpedance of the output circuit 100 from the viewpoint of the data pinDQ becomes 40Ω (=240 Ω/6)

When only the two unit buffers 121 and 122 are activated out of thethree unit buffers 121 to 123 that constitute the second output buffer120, the impedance of the output circuit 100 from the viewpoint of thedata pin DQ becomes 120Ω (=240 Ω/2). When only one unit buffer 123 isactivated, the impedance of the output circuit 100 from the viewpoint ofthe data pin DQ becomes 240Ω.

The operation of the unit buffers 111 to 113 is controlled based onoperation signals 161P and 161N that are supplied from a pre-stagecircuit 161. The operation of the unit buffers 121 to 123 is controlledbased on operation signals 162P and 162N that are supplied from apre-stage circuit 162. The operation of the unit buffer 123 iscontrolled based on operation signals 163P and 163N that are suppliedfrom a pre-stage circuit 163. As shown in FIG. 1, an impedance controlsignal DRZQ supplied from a calibration circuit 130 is commonly appliedto the pre-stage circuits 161 to 163.

FIG. 2 is a circuit diagram of the unit buffer 111.

As shown in FIG. 2, the unit buffer 111 includes plural (five in thisembodiment) P-channel MOS transistors 211 to 215 connected in parallel,plural (five in this embodiment) N-channel MOS transistors 221 to 225connected in parallel, and resistors 231 and 232 that are connected inseries between the transistors 211 to 215 and the transistors 221 to225. A contact point between the resistor 231 and the resistor 232 isconnected to the data pin DQ. Of the unit buffer 111, a part includingthe P-channel MOS transistors 211 to 215 and the resistor 231constitutes a pull-up circuit PU. A part including the N-channel MOStransistors 221 to 225 and the resistor 232 constitutes a pull-downcircuit PD.

Five operation signals 161P1 to 161P5 that constitute the operationsignal 161P are supplied to the gates of the transistors 211 to 215.Five operation signals 161N1 to 161N5 that constitute the operationsignal 161N are supplied to the gates of the transistors 221 to 225.Based on this arrangement, the ten transistors that are included in theunit buffer 111 can be individually on/off controlled based on the tenoperation signals including the operation signals 161P1 to 161P5 and theoperation signals 161N1 to 161N5.

The parallel circuit including the transistors 211 to 215, and theparallel circuit including the transistors 221 to 225 are designed tohave resistance of 120Ω during the conduction time.

However, the on resistance of the transistors varies depending onmanufacturing conditions, and also varies depending on the ambienttemperature and the power supply voltage during the operation.Therefore, desired impedance is not always obtained. In order to set120Ω to the impedance, the number of transistors to be turned on needsto be adjusted. For this purpose, the parallel circuits including pluraltransistors are used.

In order to adjust the impedance finely and in a wide range, it ispreferable to mutually differentiate a W/L ratio (a gate width to gatelength ratio) of the plural transistors that constitute the parallelcircuit. Preferably, weight of the power of two is used. Consideringthis point, according to this embodiment, when the W/L ratio of thetransistor 211 is “1”, the W/L ratios of the transistors 212 to 215 areset to “2”, “4”, “8”, and “16”, respectively (The values of the W/Lratios are relative values, and do not represent actual W/L ratios. Thissimilarly applies to the following explanations). By suitably selectingthe transistors to be turned on based on the operation signals 161P1 to161P5 and the operation signals 161N1 to 161N5, the on resistance of theparallel circuit can be fixed to substantially 120Ω, regardless of thevariation due to the manufacturing conditions and a temperature change.

The resistances of the resistors 231 and 232 are set to 120Ω,respectively. With this arrangement, when at least one of the parallelcircuit including the transistors 211 to 215 and the parallel circuitincluding the transistors 221 to 225 is in the on state, the impedanceof the unit buffer 111 from the viewpoint of the data pin DQ becomes240Ω. A tungsten (W) resistor can be used for the resistors 231 and 232.

Other unit buffers 112 and 113 that constitute the first output buffer110 also have circuit structures that are the same as that of the unitbuffer 111 shown in FIG. 2, and are controlled by the same operationsignals 161P1 to 161P5 and the operation signals 161N1 to 161N5. On theother hand, other unit buffers 121 to 123 that constitute the secondoutput buffer 120 have the same circuit structures as that of the unitbuffer 111 shown in FIG. 2. However, the operations of the unit buffers121 and 122 are controlled by the operation signals 162P and 162N, andthe operation of the unit buffer 123 is controlled based on theoperation signals 163P and 163N. The operation signals 162P, 162, 163P,and 163N also have five operation signals, respectively, and are used tocontrol the corresponding pull-up circuit UP or the pull-down circuitPD.

FIG. 3 is a circuit diagram of the calibration circuit 130.

As shown in FIG. 3, the calibration circuit 130 includes pull-upcircuits 131 and 132, a pull-down circuit 133, a counter 134 thatcontrols the operation of the pull-up circuits 131 and 132, a counter135 that controls the operation of the pull-down circuit 133, acomparator 136 that controls the counter 134, and a comparator 137 thatcontrols the counter 135.

FIG. 4 is a circuit diagram of the pull-up circuit 131.

As shown in FIG. 4, the pull-up circuit 131 has a circuit structuresubstantially the same as that of the pull-up circuit PU included in theunit buffers 111 to 113 and 121 to 123, respectively. In other words,the pull-up circuit 131 includes five P-channel MOS transistors 311 to315 that are connected in parallel, and a resistor 331 of which one endis connected to drains of these transistors. The other end of theresistor 331 is connected to a calibration pin ZQ.

The transistors 311 to 315 included in the pull-up circuit 131correspond to the transistors 211 to 215 shown in FIG. 2, and have thesame impedance, respectively. Therefore, like the W/L ratios of thetransistors 211 to 215, the W/L ratios of the transistors 311 to 315 arealso set to “1”, “2”, “4”, “8”, and “16”, respectively. However, so longas the impedances are substantially the same, the transistor sizes ofthe transistors 311 to 315 included in the pull-up circuit 131 do notneed to be exactly the same as the transistor sizes of the transistors211 to 215 shown in FIG. 2, and shrunk transistors can be also used.

The resistor 331 also corresponds to the resistor 231 shown in FIG. 2.Therefore, resistance of the resistor 331 is also set to 120Ω.

The counter 134 supplies impedance control signals DRZQP1 to DRZQP5 tothe gates of the transistors 311 to 315, respectively, therebycontrolling the operation of the pull-up circuit 131. The impedancecontrol signals DRZQP1 to DRZQP5 correspond to the operation signals161P1 to 161P5.

The pull-up circuit 132 also has the same circuit structure as that ofthe pull-up circuit 131 shown in FIG. 4. The impedance control signalsDRZQP1 to DRZQP5 are also supplied to the gates of the five transistorsincluded in the pull-up circuit 132.

FIG. 5 is a circuit diagram of the pull-down circuit 133.

As shown in FIG. 5, the pull-down circuit 133 has a circuit structuresubstantially the same as that of the pull-down circuit PD included inthe unit buffers 111 to 113 and 121 to 123, respectively. In otherwords, the pull-down circuit 133 includes five N-channel MOS transistors321 to 325 that are connected in parallel, and a resistor 332 of whichone end is connected to drains of these transistors.

The transistors 321 to 325 included in the pull-down circuit 133correspond to the transistors 221 to 225 shown in FIG. 2, and have thesame impedance, respectively. The configuration of the pull-down circuit133 is similar to that of the pull-up circuit 131, in this respect. Theresistor 332 also corresponds to the resistor 232 shown in FIG. 2.Therefore, resistance of the resistor 332 is also set to 120Ω.

The counter 135 supplies impedance control signals DRZQN1 to DRZQN5 tothe gates of the transistors 321 to 325, respectively, therebycontrolling the operation of the pull-down circuit 133. The impedancecontrol signals DRZQN1 to DRZQN5 correspond to the operation signals161N1 to 161N5.

As explained above, the pull-up circuits 131 and 132 have substantiallythe same circuit structures as that of the pull-up circuit PU includedin the unit buffers 111 to 113 and 121 to 123, respectively. Thepull-down circuit 133 has substantially the same circuit structure asthat of the pull-down circuit PD included in the unit buffers 111 to 113and 121 to 123, respectively.

Therefore, the impedances of the pull-up circuits 131 and 132 and thepull-down circuit 133 are all 240Ω after the adjustment. Among thesecircuits, the pull-up circuit 132 and the pull-down circuit 133constitute a “replica buffer”, respectively. Therefore, the replicabuffer has substantially the same circuit structure as those of the unitbuffers 111 to 113 and 121 to 123. That the replica buffer has“substantially the same” circuit structure means that the transistorsincluded in the replica buffers are regarded the same when they areshrunk. A contact A as the output end of the replica buffer is connectedto a non-inverted input terminal (+) of the comparator 137, as shown inFIG. 3.

The counter 134 counts up or counts down when a control signal ACT1 isactivated. When a comparison signal COMP1 that is output from thecomparator 136 is at a high level, the counter 134 continues countingup, and when the signal COMP1 is at a low level, the counter 134continues counting down. A noninverted input terminal (+) of thecomparator 136 is connected to the calibration pin ZQ, and a noninvertedinput terminal (−) is connected to an intermediate point between theresistors 138 and 139 that is connected to a power supply potential(VDD) and a ground potential (GND).

Based on this structure, the comparator 136 compares the potential ofthe calibration pin ZQ with the intermediate voltage (VDD/2). When theformer potential is higher, the output comparison signal COMP1 is set toa high level. When the latter potential is higher, the comparison signalCOMP1 is set to a low level.

On the other hand, the counter 135 counts up or counts down when acontrol signal ACT2 is activated. When a comparison signal COMP2 that isoutput from the comparator 137 is at a high level, the counter 135continues counting up, and when the signal COMP2 is at a low level, thecounter 135 continues counting down. A non-inverted input terminal (+)of the comparator 137 is connected to a contact point A as the outputend of the replica buffer, and a non-inverted input terminal (−) isconnected to an intermediate point between the resistors 138 and 139.

Based on this structure, the comparator 137 compares the outputpotential of the replica buffer with the intermediate voltage (VDD/2).When the former potential is higher, the output comparison signal COMP2is set to a high level. When the latter potential is higher, thecomparison signal COMP2 is set to a low level.

When the control signals ACT1 and ACT2 are inactivated, the counters 134and 135 stop the count operation, and hold the current count value. Asdescribed above, the count value of the counter 134 is used for theimpedance control signal DRZQP, and the count value of the counter 135is used for the impedance control signal DRZQN. The collective impedancecontrol signal DRZQ is supplied in common to the pre-stage circuits 161to 163 shown in FIG. 1.

FIG. 6 is a circuit diagram of the pre-stage circuit 161.

As shown in FIG. 6, the pre-stage circuit 161 includes five OR circuits411 to 415 and five AND circuits 421 to 425. An output control circuit150 supplies a selection signal 151P in common to the OR circuits 411 to415, and the calibration circuit 130 supplies the impedance controlsignals DRZQP1 to DRZQP5 to the OR circuits 411 to 415. On the otherhand, the output control circuit 150 supplies the selection signal 151Nin common to the AND circuits 421 to 425, and the calibration circuit130 supplies the impedance control signals DRZQN1 to DRZQN5 to the ANDcircuits 421 to 425.

The operation signals 161P1 to 161P5 that form the operation signal 161Poutput from the OR circuits 411 to 415, and the operation signals 161N1to 161N5 that form the operation signal 161N output from the ANDcircuits 421 to 425, are supplied in common to the unit buffers 111 to113, as shown in FIG. 1, thereby controlling the correspondingtransistors.

The other pre-stage circuits 162 and 163 also have circuitconfigurations similar to those of the pre-stage circuit 161 shown inFIG. 6. In this case, the selection signals 152P and 152N from theoutput control circuit 150 are supplied in common to the OR circuit andthe AND circuit respectively that are included in the pre-stage circuit162. The selection signals 153P and 153N from the output control circuit150 are supplied in common to the OR circuit and the AND circuitrespectively that are included in the pre-stage circuit 163.

The configuration of the output circuit 100 according to this embodimenthas been explained above. The operation of the output circuit 100according to this embodiment is explained next, in the order of thecalibration operation, the data output operation, and the ODT operation.

First, the calibration operation will be now explained.

The calibration operation is for adjusting the impedance of the outputbuffers 110 and 120, as described above. The calibration operation iscarried out to correct variations of the impedance due to processconditions at the manufacturing time, and to correct changes of theimpedance due to changes in the ambient temperature and variations inthe power supply voltage.

Therefore, when high precision is required, it is preferable toperiodically execute the calibration operation during the actualoperation, instead of carrying out the calibration operation only onceat the power supply time or the initialization time such as theresetting time. The output circuit 100 according to this embodiment isparticularly effective when the calibration operation is periodicallyexecuted during the actual operation as explained above. The calibrationoperation is explained in detail below.

In executing the calibration operation, first, the external resistor Rneeds to be connected to the calibration pin ZQ (see FIG. 1 and FIG. 3).The external resistor R needs to have impedance that is the same as theimpedance (i.e., the impedance of a replica buffer) required for theunit buffers 111 to 113 and 121 to 123. Therefore, in this embodiment,the external resistor R having 240Ω is used.

FIG. 7 is a flowchart for explaining the calibration operation.

First, when the calibration operation is instructed by an externalcommand (step S11: YES), the control signal ACT1 is activated, and thecounter 134 included in the calibration circuit 130 starts a countoperation (step S12). In the initialization state after the power supplyis turned on, the count value of the counter 134 is all reset to 1(“11111” in this example). Therefore, the inductance control signalsDRZQP1 to DRZQP5 are all at the high level. Consequently, thetransistors 311 to 315 that are included in the pull-up circuit 131 areall in the off state. As a result, the comparison signal COMP1 that isthe output of the comparator 136 is at the low level.

Therefore, the counter 134 continues counting down. The on/off state ofthe transistors 311 to 315 is switched over linked to the count down.Specifically, because the W/L ratios of the transistors 311 to 315 areset to “1”, “2”, “4”, “8”, and “16”, respectively, the least significantbit (LSB) of the counter 134 is allocated to the impedance controlsignal DRZQP1, and the most significant bit (MSB) of the counter 134 isallocated to the impedance control signal DRZQP5. With this arrangement,the impedance of the pull-up circuit 131 can be changed at a minimumpitch.

When the count down continues, the impedance of the pull-up circuit 131gradually decreases, and the potential of the calibration pin ZQgradually increases. When the impedance of the pull-up circuit 131decreases to less than the target impedance 240 Ω, the potential of thecalibration pin ZQ exceeds the intermediate voltage (VDD/2). Therefore,the comparison signal COMP1 that is output from the comparator 136 isinverted to a high level. In response to this, the counter 134 continuescounting up, thereby increasing the impedance of the pull-up circuit 131this time.

By repeating this operation, the potential of the calibration pin ZQ isstabilized near the intermediate voltage (VDD/2). Thereafter, thecontrol signal ACT1 is inactivated, thereby stopping the count operationof the counter 134 (step S13). As a result, the count value of thecounter 134 is fixed, and the levels of the impedance control signalsDRZQP1 to DRZQP5 are firmed.

Based on the above operation, the impedances of the pull-up circuits 131and 132 are adjusted to 240Ω. In this case, the initial value of thecounter 134 can be a set value of 240Ω, instead of all one, and thisvalue can be adjusted by counting up or counting down according to thelevel of the comparison signal COMP1.

The control signal ACT2 is then activated, thereby starting the countoperation of the counter 135 included in the calibration circuit 130(step S14). In the initial state, the count value of the counter 135 isreset to all one (“00000” in this example), as an example. Therefore,the impedance control signals DRZQP1 to DRZQP5 that are output from thecounter 135 are all at the low level Consequently, the transistors 321to 325 included in the pull-down circuit 133 are all in the off state.As a result, the comparison signal COMP2 that is output from thecomparator 137 becomes at a high level.

In response to this, the counter 135 continues the count up. The on/offstate of the transistors 321 to 325 is switched over linked to thiscount up. In this case, the W/L ratios of the transistors 321 to 325 areset to “1”, “2”, “4”, “8”, and “16”, respectively. Corresponding tothese W/L ratios, the least significant bit (LSB) of the counter 135 isallocated to the impedance control signal DRZQN1, and the mostsignificant bit (MSB) of the counter 135 is allocated to the impedancecontrol signal DRZQN5. With this arrangement, the impedance of thepull-down circuit 133 can be changed at a minimum pitch.

When the count up continues, the impedance of the pull-down circuit 133gradually decreases, and as shown in FIG. 9, the potential of thecontact A gradually decreases. When the impedance of the pull-downcircuit 133 decreases to less than the target impedance 240Ω, thepotential of the contact A becomes lower than the intermediate voltage(VDD/2). Therefore, the comparison signal COMP2 that is output from thecomparator 137 is inverted to a low level. In response to this, thecounter 135 continues the count down, thereby increasing the impedanceof the pull-down circuit 133 this time.

By repeating this operation, the potential of the contact point A isstabilized near the intermediate voltage (VDD/2). Thereafter, thecontrol signal ACT2 is inactivated, thereby stopping the count operationof the counter 135 (step S15). As a result, the count value of thecounter 135 is fixed, and the levels of the impedance control signalsDRZQN1 to DRZQN5 are firmed.

Based on the above operation, the impedance of the pull-down circuit 133is also adjusted to 240Ω. In this case, the initial value of the counter135 can be a set value of 240Ω, instead of all one, and this value canbe adjusted by counting up or counting down according to the level ofthe comparison signal COMP2.

The process returns to step S11, and the instruction for the calibrationoperation based on an external command is awaited. When the calibrationoperation is instructed (step S11: YES), the above series of operationis carried out again.

The above is the calibration operation. The impedance control signalDRZQ that is firmed by the calibration operation is supplied in commonto the pre-stage circuits 161 to 163 shown in FIG. 1. Therefore, theunit buffers 111 to 113 and 121 to 123 that are controlled by thepre-stage circuits 161 to 163 can also operate accurately in theimpedance of 240Ω. In other words, the plurality of unit buffers can becollectively calibrated. The data output operation and the ODT operationwill be explained next.

The data output operation and the ODT operation need to be executedafter the above calibration operation is carried out at least once. Withthis arrangement, the unit buffers can operate at the correct impedance.

The data output operation is carried out via an external bus (not shown)connected to the data pin DQ, by driving the data pin DQ at a high levelor a low level.

When the data pin DQ is driven at a high level, the output controlcircuit 150 sets all selection signals 151P to 153P and 151N to 153N toa low level. With this arrangement, out of OR circuits included in thepre-stage circuits 161 to 163 in FIG. 6, the OR circuits in which thecorresponding impedance control signals DRZQP1 to DRZQP5 are at the lowlevel output operation signals of a low level, and the OR circuits inwhich the corresponding impedance control signals DRZQP1 to DRZQP5 areat the high level output operation signals of a high level.

On the other hand, AND circuits included in the pre-stage circuits 161to 163 all output the operation signals of a low level, regardless ofthe levels of the impedance control signals DRZQN1 to DRZQN5. As aresult, the pull-up circuits PUs included in the unit buffers 111 to 113and 121 to 123 are turned on at the same impedance 240Ω as that of thepull-up circuits 131 and 132 that are included in the calibrationcircuit 130, and the pull-down circuits PDs are all turned off. Namely,all the pull-up circuits PUs included in the six unit buffers 111 to 113and 121 to 123 are accurately turned on at 240Ω. Therefore, the data pinDQ is driven accurately in the impedance of 40Ω (=240 Ω/6) at a highlevel (VDD potential).

Similarly, when the data pin DQ is driven at a low level, the outputcontrol circuit 150 sets all the selection signals 151P to 153P and 151Nto 153N to a high level as shown in FIG. 10. With this arrangement, outof AND circuits included in the pre-stage circuits 161 to 163 shown inFIG. 6, the AND circuits in which the corresponding impedance controlsignals DRZQN1 to DRZQN5 are at the low level output operation signalsof a low level, and the AND circuits in which the correspondingimpedance control signals DRZQN1 to DRZQN5 are at the high level outputoperation signals of a high level.

On the other hand, OR circuits included in the pre-stage circuits 161 to163 all output the operation signals of a high level, regardless of thelevels of the impedance control signals DRZQP1 to DRZQP5. As a result,the pull-down circuits PDs included in the unit buffers 111 to 113 and121 to 123 are turned off at the same impedance 240Ω as that of thepull-down circuit 133 that is included in the calibration circuit 130,and the pull-up circuits PUs are all turned off. Accordingly, all thepull-down circuits PDs included in the six unit buffers 111 to 113 and121 to 123 are accurately turned on at 240Ω. Therefore, the data pin DQis driven accurately in the impedance of 40Ω (=240 Ω/6) at a low level(GND potential).

On the other hand, the impedance in the ODT operation is often requiredto be switched to plural kinds of impedances, depending onspecifications. The output circuit 100 according to this embodimentmeets this requirement, and can be set to at least any one of 120Ω and240Ω.

First, in carrying out the ODT operation at 120Ω, the output controlcircuit 150 sets the selection signals 151P, 152N, and 153P to a highlevel, and sets the selection signals 151N, 152P, and 153N to a lowlevel, as shown in FIG. 10. As a result, the operation signals 161P,161N, 163P, and 163N that are output from the pre-stage circuits 161 and163 are used to turn off all the transistors included in the unitbuffers 111 to 113 and 123, thereby setting the unit buffers 111 to 113and 123 to an inactive state. On the other hand, the operation signals162P (162P1 to 162P5) and 162N (162N1 to 162N5) that are output from thepre-stage circuit 162 coincide with the levels of the correspondingimpedance control signals DRZQP1 to DRZQP5 and DRZQN1 to DRZQN5.

As a result, the pull-up circuits PUs included in the unit buffers 121and 122 are turned on at the same impedance 240Ω as that of the pull-upcircuits 131 and 132 that are included in the calibration circuit 130,and the pull-down circuits PDs are turned on at the same impedance 240Ωas that of the pull-down circuit 133 that is included in the calibrationcircuit 130. Therefore, the data pin DQ is terminated accurately in theimpedance of 120Ω (=240Ω/2) at a VDD/2 potential.

In carrying out the ODT operation at 240Ω, the output control circuit150 sets the selection signals 151P, 152P, and 153N to a high level, andsets the selection signals 151N, 152N, and 153P to a low level, as shownin FIG. 10. As a result, the operation signals 161P, 161N, 162P, and162N that are output from the pre-stage circuits 161 and 162 are used toturn off all the transistors included in the unit buffers 111 to 113,121, and 122, thereby setting the unit buffers 111 to 113, 121, and 122to an inactive state. On the other hand, the operation signals 163P(163P1 to 163P5) and 163N (163N1 to 163N5) that are output from thepre-stage circuit 163 coincide with the levels of the correspondingimpedance control signals DRZQP1 to DRZQP5 and DRZQN1 to DRZQN5.

As a result, the pull-up circuits PUs included in the unit buffer 123 isturned on at the same impedance 240Ω as that of the pull-up circuits 131and 132 that are included in the calibration circuit 130, and thepull-down circuits PDs are turned on at the same impedance 240Ω as thatof the pull-down circuit 133 that is included in the calibration circuit130. Therefore, the data pin DQ is terminated accurately in theimpedance of 240Ω at a VDD/2 potential.

When the ODT operation of 80Ω is necessary based on the specification,for example, all the unit buffers 121 to 123 can be activated.

As explained above, the output circuit 100 according to this embodimenthas the plural unit buffers 111 to 113 and 121 to 123, having mutuallythe same circuit structures, connected in parallel, and selects a unitbuffer that is activated at the data output time or the ODT operationtime. With this arrangement, the output circuit 100 adjusts theimpedance of the data pin DQ. Therefore, the calibration circuit 130 cancollectively carry out the calibrations. Consequently, the calibrationcircuit to be used to adjust the impedance at the data output time andthe calibration circuit to be used to adjust the impedance at the ODTtime are not separately required. As a result, the circuit scale of thecalibration circuit can be decreased.

Because adjustment of impedance at the data output time, and adjustmentof impedance at the ODT time can be simultaneously completed based onthe one-time calibration, the time required for the calibration can bedecreased. Therefore, even when the calibration is periodically executedat the actual use time, the overhead of the calibration can beminimized.

The present invention is in no way limited to the aforementionedembodiments, but rather various modifications are possible within thescope of the invention as recited in the claims, and naturally thesemodifications are included within the scope of the invention.

For example, the output circuit 100 according to this embodiment has sixunit buffers. At the time of carrying out the data output operation, allthe six unit buffers are activated, and at the time of carrying out theODT operation, one or two unit buffers are activated. However, the totalnumber of unit buffers is not particularly limited when the total numberis at least two. The number of unit buffers that are activated at thedata output time or the ODT operation time is not particularly limitedeither.

In the output circuit 100 according to this embodiment, each of thethree unit buffers 111 to 113 that constitute the first output buffer110 has an independent circuit. Similarly, each of the two unit buffers121 and 122 that constitute the second output buffer 120 also has anindependent circuit. However, these circuits do not need to becompletely independent of each other. So long as individual unit bufferscan be regarded as the same as a replica buffer, these unit buffers canbe mutually connected within the output buffer, as shown in FIG. 11.

FIG. 11 shows the three unit buffers 111 to 113 that constitute thefirst output buffer 110, and that are connected to each other inside thefirst output buffer 110. In this example, the P-channel MOS transistorthat is included in the pull-up circuit PU and the contact of theresistor are connected to each other. The N-channel MOS transistor thatis included in the pull-down circuit PD and the contact of the resistorare connected to each other. In this case, the individual unit buffers111 to 113 are regarded as the same as a replica buffer. Therefore, inthe present invention, the “parallel connection of unit buffers” alsoincludes this case.

1-12. (canceled)
 13. An output circuit for a semiconductor device,comprising: a plurality of unit buffers connected in common to a datapin, the plurality of unit buffers being divided into at least first andsecond groups; a first pre-stage circuit that activates one or more unitbuffers belonging to the first group; a second pre-stage circuit thatactivates one or more unit buffers belonging to the second group; and anoutput control circuit that independently selects the first and secondpre-stage circuits.
 14. The output circuit for a semiconductor device asclaimed in claim 13, wherein the unit buffers have mutuallysubstantially the same circuit structures.
 15. The output circuit for asemiconductor device as claimed in claim 13, wherein a number of unitbuffers belonging to the first group is different from a number of unitbuffers belonging to the second group.
 16. The output circuit for asemiconductor device as claimed in claim 13, wherein the output controlcircuit selects at least the first pre-stage circuit at a data outputtime, and the output control circuit selects at least the secondpre-stage circuit at an ODT operation time.
 17. The output circuit for asemiconductor device as claimed in claim 16, wherein the output controlcircuit also selects the second pre-stage circuit at the data outputtime.
 18. The output circuit for a semiconductor device as claimed inclaim 16, wherein the output control circuit does not select the firstpre-stage circuit at the ODT operation time.
 19. The output circuit fora semiconductor device as claimed in claim 17, wherein the outputcontrol circuit does not select the first pre-stage circuit at the ODToperation time.
 20. The output circuit for a semiconductor device asclaimed in claim 14, further comprising a calibration circuit thatcontrols impedances of the plurality of unit buffers in common.
 21. Theoutput circuit for a semiconductor device as claimed in claim 20,wherein said calibration circuit includes a replica buffer havingsubstantially the same circuit structure as that of the unit buffer. 22.An output circuit for a semiconductor device, comprising: a first outputbuffer having parallel-connected two or more unit buffers connected incommon to a data pin; and a second output buffer having one orparallel-connected two or more unit buffers connected in common to thedata pin, wherein the unit buffers have mutually substantially the samecircuit structures, a number of unit buffers including the first outputbuffer is different from that of the second output buffer.
 23. Theoutput circuit for a semiconductor device as claimed in claim 22,wherein the first output buffer is activated at least at a data outputtime and the second output buffer is activated at least at an ODToperation time.
 24. The output circuit for a semiconductor device asclaimed in claim 23, wherein said second output buffer is also activatedat the data output time.
 25. The output circuit for a semiconductordevice claimed in claim 23, wherein said first output buffer isinactivated at least at the ODT operation time.
 26. The output circuitfor a semiconductor device as claimed in claim 24, wherein said firstoutput buffer is inactivated at least at the ODT operation time.
 27. Theoutput circuit for a semiconductor device as claimed in claim 22,further comprising a calibration circuit that controls impedances of theplurality of unit buffers in common.
 28. The output circuit for asemiconductor device as claimed in claim 27, wherein said calibrationcircuit includes a replica buffer having substantially the same circuitstructure as that of the unit buffer.
 29. An output circuit for asemiconductor device that can perform ODT operation, comprising: aplurality of unit buffers connected in common to a data pin; and anoutput control circuit that activates a first number of unit buffers incommon when an ODT impedance is set to a first value and activates asecond number of unit buffers in common when the ODT impedance is set toa second value.
 30. The output circuit for a semiconductor device asclaimed in claim 29, wherein at least parts of the plurality of unitbuffers are activated at a data output time.
 31. The output circuit fora semiconductor device as claimed in claim 29, further comprising acalibration circuit that controls impedances of the plurality of unitbuffers in common.
 32. The output circuit for a semiconductor device asclaimed in claim 31, wherein said calibration circuit includes a replicabuffer having substantially the same circuit structure as that of theunit buffer.